GaNbOFN

ceramic

· GaNbOFN

GaNbOFN is an experimental oxynitride ceramic compound combining gallium, niobium, oxygen, and nitrogen elements, representing a research-phase material in the wide-bandgap semiconductor and advanced ceramic family. This material is primarily of interest in cutting-edge applications requiring high-temperature stability, wide optical bandgaps, or enhanced electronic properties beyond conventional oxides, though it remains largely in development rather than established industrial production. Potential applications span semiconductor devices, photocatalysis, and specialized refractory uses where the combination of elements offers improved thermal, chemical, or electronic performance compared to single-component oxides or conventional nitrides.

wide-bandgap semiconductorshigh-temperature ceramicsphotocatalytic devicesresearch/development materialselectronic device substratesadvanced refractory applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaNbOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental