GaNaON2

semiconductor

· GaNaON2

GaNaON₂ is an experimental oxynitride semiconductor compound combining gallium, sodium, oxygen, and nitrogen elements, representing an emerging materials category at the intersection of nitride and oxide semiconductor research. This compound is primarily of academic and research interest rather than established in high-volume industrial production, with potential applications in wide-bandgap semiconductor devices and optoelectronics where tunable electronic properties between traditional GaN nitrides and oxide semiconductors could offer advantages. Its novelty and mixed-anion chemistry make it a candidate for next-generation power electronics, UV detection, or photocatalytic applications, though practical engineering adoption remains in early investigation phases.

wide-bandgap semiconductors (research)UV optoelectronics (emerging)power electronics (developmental)photocatalytic devices (exploratory)next-generation transistors (laboratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7000	eV	—
Magnetic Moment(μB)	-0.00000408	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaNaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control