GaN — Properties & Data | MatWorld

GaN

semiconductor

· GaN

Gallium nitride (GaN) is a wide-bandgap semiconductor compound with a hexagonal crystal structure, widely used in high-power and high-frequency electronic devices. It is the enabling material for modern power electronics, RF amplifiers, and LED technology, chosen over silicon for applications requiring higher efficiency, faster switching speeds, and operation at elevated temperatures. GaN's superior performance in energy conversion and signal amplification has made it indispensable in renewable energy systems, telecommunications infrastructure, automotive electrification, and consumer electronics.

power conversion and switching devicesRF and microwave amplifiersLED lighting and displayselectric vehicle power electronicsrenewable energy invertershigh-frequency telecommunications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

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Method

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)3 entries	171.7	GPa	DFT
↳	178.7	GPa	DFT · OptB88vdW
↳	209.3	GPa	DFT · PBE
Elastic Compliance Tensor(Sij)	Matrix (redacted)	1/GPa	DFT · PBE
Elastic Anisotropy(AU)	1.163	-	DFT · PBE
Elastic Stiffness Tensor(Cij)	Matrix (redacted)	Pa	DFT · PBE
Exfoliation Energy(Eexf)	499.8	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)2 entries	0.2500	-	DFT · OptB88vdW
↳	0.2258	-	DFT · PBE
Shear Modulus(G)3 entries	105.5	GPa	DFT
↳	114.2	GPa	DFT · OptB88vdW
↳	140.5	GPa	DFT · PBE

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Thermal Conductivity(k)	181	W/(m·K)	Measured

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Property	Value	Unit	Conditions	Source
Density(ρ)	5.941	kg/m³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions	Source
Band Gap(Eg)3 entries	3.250	eV	Measured
↳	1.943	eV	DFT · OptB88vdW
↳	3.084	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	10.80	-	DFT · OptB88vdW
↳	10.96	-	DFT · PBE
↳	34.25 range 8.479–60.03median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	5.880	-	DFT · OptB88vdW
↳	4.516	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.1900	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.647	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	1.030	C/m²	DFT · OptB88vdW
↳	0.07426	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000390	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00184	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-59.89	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	320.9	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	3.710	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.00330	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-0.5677	eV/atom	DFT · OptB88vdW
↳	-0.5680	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.