GaN
semiconductor· GaN
Gallium nitride (GaN) is a wide-bandgap semiconductor compound with a hexagonal crystal structure, widely used in high-power and high-frequency electronic devices. It is the enabling material for modern power electronics, RF amplifiers, and LED technology, chosen over silicon for applications requiring higher efficiency, faster switching speeds, and operation at elevated temperatures. GaN's superior performance in energy conversion and signal amplification has made it indispensable in renewable energy systems, telecommunications infrastructure, automotive electrification, and consumer electronics.
power conversion and switching devicesRF and microwave amplifiersLED lighting and displayselectric vehicle power electronicsrenewable energy invertershigh-frequency telecommunications
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 209.3 | GPa | — | ||
| ↳ | 171.7 | GPa | — | ||
| ↳ | 178.7 | GPa | — | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | ||
Elastic Anisotropy(AU) | 1.163 | - | — | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | ||
Exfoliation Energy(Eexf) | 499.8 | meV/atom | — | ||
Poisson's Ratio(ν)2 entries | 0.2258 | - | — | ||
| ↳ | 0.2500 | - | — | ||
Shear Modulus(G)3 entries | 140.5 | GPa | — | ||
| ↳ | 105.5 | GPa | — | ||
| ↳ | 114.2 | GPa | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 181 | W/(m·K) | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.941 | kg/m³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.250 | eV | — | ||
| ↳ | 1.786 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 10.96 | - | — | ||
| ↳ | 10.80 | - | — | ||
| ↳ | 34.25 range 8.479–60.03median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.07426 | C/m² | — | ||
| ↳ | 1.030 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -59.54 | µV/K | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00330 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.5680 | eV/atom | — | ||
| ↳ | -0.5677 | eV/atom | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.