GaN

Gallium nitride (GaN) is a wide-bandgap semiconductor compound with a hexagonal crystal structure, widely used in high-power and high-frequency electronic devices. It is the enabling material for modern power electronics, RF amplifiers, and LED technology, chosen over silicon for applications requiring higher efficiency, faster switching speeds, and operation at elevated temperatures. GaN's superior performance in energy conversion and signal amplification has made it indispensable in renewable energy systems, telecommunications infrastructure, automotive electrification, and consumer electronics.