GaMoO2N

ceramic

· GaMoO2N

GaMoO2N is an experimental oxynitride ceramic compound combining gallium, molybdenum, oxygen, and nitrogen phases. This material remains primarily in research development rather than established industrial use, but belongs to the family of advanced ceramic oxynitrides that show promise for high-temperature structural applications and semiconducting devices where conventional oxides or nitrides fall short. Engineers investigating GaMoO2N would be exploring its potential in extreme-environment applications where mixed anion chemistry (oxygen + nitrogen bonding) could provide tailored mechanical, thermal, or electronic properties unavailable in single-anion ceramics.

high-temperature ceramics (research)semiconductor substrates (exploratory)refractory coatings (developmental)functional ceramicsadvanced materials research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000416	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaMoO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental