GaMo4Se4S4 is a mixed-chalcogenide compound containing gallium, molybdenum, selenium, and sulfur elements, representing an experimental layered material in the broader family of transition metal chalcogenides. This compound is primarily of research interest for its potential in optoelectronic and photocatalytic applications, as mixed selenide-sulfide systems can exhibit tunable bandgaps and enhanced charge-carrier properties compared to single-chalcogenide analogues. The material's layered structure and composition suggest potential relevance to next-generation semiconductor devices, though industrial applications remain under development.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2064 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000800 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7694 | eV/atom | — |