GaMo4S8 is an experimental transition metal sulfide compound combining gallium and molybdenum in a layered crystal structure. This material belongs to the family of metal chalcogenides, which are of significant research interest for optoelectronic and catalytic applications due to their tunable band gaps and anisotropic properties. While not yet widely commercialized, compounds in this class show promise for next-generation semiconductor devices, photocatalysis, and energy storage applications where the layered structure enables efficient charge transport and surface reactivity.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 96.23 | GPa | — | ||
Poisson's Ratio(ν) | 0.3100 | - | — | ||
Shear Modulus(G) | 42.14 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.003 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 232.3 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 4.012 | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01160 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8802 | eV/atom | — |