GaMnOFN is an oxynitride ceramic compound containing gallium, manganese, oxygen, and nitrogen elements. This material belongs to the oxynitride family—a hybrid ceramic class combining the properties of oxides and nitrides. Research on GaMnOFN and related gallium-manganese oxynitrides focuses on photocatalytic and electronic applications, where nitrogen incorporation can modify band structure and catalytic activity compared to purely oxide counterparts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.276 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8800 | eV/atom | — |