GaMnO2N

ceramic

· GaMnO2N

GaMnO2N is an experimental oxynitride ceramic combining gallium, manganese, oxygen, and nitrogen elements. This material belongs to the emerging class of mixed-anion ceramics that are primarily investigated in research settings for their potential to combine properties from oxide and nitride systems. The inclusion of both oxygen and nitrogen allows tuning of electronic structure and defect chemistry, making it of interest for photocatalytic, magnetic, and semiconductor applications where conventional single-anion ceramics have limitations.

photocatalytic researchadvanced ceramics developmentsemiconductor researchmagnetic materials explorationenergy conversion devices (experimental)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.115	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaMnO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental