GaMnN3

metal

· GaMnN3

GaMnN3 is an experimental nitride compound combining gallium and manganese, belonging to the family of wide-bandgap semiconductors and magnetic materials. This material is primarily of research interest for potential spintronic and magnetic semiconductor applications, where the combination of semiconducting and ferromagnetic properties could enable novel device functionalities beyond conventional semiconductor or magnetic material capabilities. While not yet established in mainstream industrial production, GaMnN-class materials are being investigated for next-generation applications that require simultaneous control of charge and spin transport.

spintronic devices (research)magnetic semiconductor applications (developmental)quantum computing elements (exploratory)high-frequency electronics (future)magnetic sensors (research phase)wide-bandgap semiconductor systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.9781	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.060	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaMnN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control