GaMgO2N

ceramic

· GaMgO2N

GaMgO₂N is an experimental oxynitride ceramic combining gallium, magnesium, oxygen, and nitrogen elements. This material belongs to the emerging class of mixed-anion ceramics, which are primarily of research interest rather than established commercial use. Oxynitride ceramics like this composition are investigated for potential applications requiring high thermal stability, wide bandgaps, and chemical resistance, particularly in optoelectronics and advanced refractory applications where conventional oxides or nitrides alone are insufficient.

research and developmentoptoelectronic semiconductorsadvanced refractorieshigh-temperature ceramicswide-bandgap materialsexperimental coatings

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	3.007	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.680	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaMgO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental