Gallium Oxide (Ga2O3) — Properties & Data | MatWorld

Gallium Oxide (Ga2O3)

Verifiedsemiconductor

· Ga2O3· Gallium Oxide· Beta-Ga2O3

Gallium oxide (Ga₂O₃) is a wide-bandgap semiconductor ceramic with a monoclinic crystal structure, positioned between silicon and gallium nitride in terms of performance capabilities. It is primarily developed for next-generation power electronics and high-frequency RF applications where superior breakdown voltage and thermal stability are critical, though it remains largely in research and early commercialization phases compared to mature semiconductors. Engineers consider Ga₂O₃ for applications demanding extreme operating conditions—high voltage switching, high-temperature circuits, and radiation-tolerant systems—where its wider bandgap offers fundamental advantages over conventional semiconductors, though manufacturing maturity and thermal management strategies remain active development areas.

power semiconductor deviceshigh-voltage switchingRF/microwave transistorshigh-temperature electronicsradiation-hard circuitsnext-generation power conversion

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

Property OverviewNormalized to typical max values

Property	Value	Unit	Conditions	Source
Young's Modulus(E)	37,854.9	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Melting Point / Solidus(Tm)	3,284.1	°F	—
Thermal Conductivity(k)	7.511	BTU/(hr·ft·°F)	—

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Property	Value	Unit	Conditions	Source
Density(ρ)	0.2150	lb/in³	—

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Method

Carrier

Property	Value	Unit	Conditions	Source
Band Gap(Eg)4 entries	4.400	eV	Measured
↳	4.800	eV	—
↳	2.267	eV	DFT · OptB88vdW
↳	4.048	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	10.00	-	—
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	4.137	-	DFT · OptB88vdW
↳	2.809	-	DFT · TBmBJ
Thermoelectric Power Factor(PF)2 entries	0.000475	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00111	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-73.46	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	439.9	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	0.000	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.261	eV/atom	Measured

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.