Gallium Oxide (Ga2O3)
VerifiedsemiconductorGallium oxide (Ga₂O₃) is a wide-bandgap semiconductor ceramic with a monoclinic crystal structure, positioned between silicon and gallium nitride in terms of performance capabilities. It is primarily developed for next-generation power electronics and high-frequency RF applications where superior breakdown voltage and thermal stability are critical, though it remains largely in research and early commercialization phases compared to mature semiconductors. Engineers consider Ga₂O₃ for applications demanding extreme operating conditions—high voltage switching, high-temperature circuits, and radiation-tolerant systems—where its wider bandgap offers fundamental advantages over conventional semiconductors, though manufacturing maturity and thermal management strategies remain active development areas.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Young's Modulus(E) | 37,854.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Melting Point / Solidus(Tm) | 3,284.1 | °F | — | ||
Thermal Conductivity(k) | 7.511 | BTU/(hr·ft·°F) | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2150 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 4.800 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 10.00 | - | — |