Gallium Oxide (Ga2O3)
VerifiedsemiconductorGallium oxide (Ga₂O₃) is a wide-bandgap semiconductor ceramic with a monoclinic crystal structure, positioned between silicon and gallium nitride in terms of performance capabilities. It is primarily developed for next-generation power electronics and high-frequency RF applications where superior breakdown voltage and thermal stability are critical, though it remains largely in research and early commercialization phases compared to mature semiconductors. Engineers consider Ga₂O₃ for applications demanding extreme operating conditions—high voltage switching, high-temperature circuits, and radiation-tolerant systems—where its wider bandgap offers fundamental advantages over conventional semiconductors, though manufacturing maturity and thermal management strategies remain active development areas.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Young's Modulus(E) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Melting Point / Solidus(Tm) | — | K | — | — | |
Thermal Conductivity(k) | — | W/(m·K) | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr) | — | - | — | — |