Gallium Arsenide (GaAs)
VerifiedsemiconductorGallium arsenide (GaAs) is a III-V compound semiconductor formed from equal parts gallium and arsenic, engineered for optoelectronic and high-frequency applications where silicon reaches its limits. It is the primary material for high-efficiency solar cells (especially in space and concentrated photovoltaic systems), infrared LEDs, laser diodes, and monolithic microwave integrated circuits (MMICs) operating at microwave and millimeter-wave frequencies. Engineers select GaAs over silicon when direct bandgap emission, superior electron mobility at high frequencies, or radiation hardness is critical; it dominates aerospace, satellite communication, and fiber-optic infrastructure where its maturity and proven reliability justify higher material cost.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Young's Modulus(E) | 12,400.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Melting Point / Solidus(Tm) | 2,260 | °F | — | ||
Specific Heat Capacity(Cp) | 0.07882 | BTU/(lb·°F) | — | ||
Thermal Conductivity(k) | 26.58 | BTU/(hr·ft·°F) | — | ||
Thermal Conductivity vs Temperature(k(T)) | Curve (5 pts) | BTU/(hr·ft·°F) | — | ||
Coefficient of Thermal Expansion(α (CTE)) | 3.183 | µin/in·°F | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1921 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.420 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 12.90 | - | — |