Gallium Arsenide (GaAs)

Verifiedsemiconductor
· GaAs· Gallium Arsenide

Gallium arsenide (GaAs) is a III-V compound semiconductor formed from equal parts gallium and arsenic, engineered for optoelectronic and high-frequency applications where silicon reaches its limits. It is the primary material for high-efficiency solar cells (especially in space and concentrated photovoltaic systems), infrared LEDs, laser diodes, and monolithic microwave integrated circuits (MMICs) operating at microwave and millimeter-wave frequencies. Engineers select GaAs over silicon when direct bandgap emission, superior electron mobility at high frequencies, or radiation hardness is critical; it dominates aerospace, satellite communication, and fiber-optic infrastructure where its maturity and proven reliability justify higher material cost.

space solar cellssatellite communication circuitshigh-frequency RF/microwave componentslaser diodes and infrared emittersfiber-optic transceiversmillimeter-wave integrated circuits

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
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Young's Modulus(E)
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Thermal Conductivity vs Temperature(k(T))
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Coefficient of Thermal Expansion(α (CTE))
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Band Gap(Eg)
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Dielectric Constant (Relative Permittivity)(εr)
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Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.