GaLiN3

ceramic

· GaLiN3

GaLiN3 is a gallium-lithium nitride ceramic compound that combines the wide bandgap semiconductor properties of gallium nitride with lithium doping, positioning it in the family of advanced nitride ceramics. This material is primarily of research and development interest for high-temperature electronics, solid-state lighting, and power conversion applications where enhanced thermal stability or modified electrical properties compared to conventional GaN are desired. The lithium incorporation represents an experimental approach to tailoring defect structures and performance in nitride ceramics, making it most relevant to emerging applications in harsh-environment power devices and next-generation wide-bandgap semiconductor technology rather than established industrial production.

wide-bandgap semiconductor researchhigh-temperature power electronicssolid-state lighting developmentthermal management compoundsexperimental nitride ceramics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.01391	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.880	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaLiN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental