GaLaO3

semiconductor

· GaLaO3

GaLaO3 is a gallium lanthanum oxide compound belonging to the rare-earth doped semiconductor family, typically investigated as a wide-bandgap material for optoelectronic and high-temperature applications. This material remains largely in the research phase, with potential applications in UV-transparent conductors, scintillation detectors, and next-generation power electronics where materials combining gallium oxide's thermal stability with rare-earth functionality offer advantages over conventional GaN or Ga2O3 platforms.

wide-bandgap semiconductorsUV transparent conductorsscintillation detectorshigh-temperature power electronicsresearch/development phaserare-earth doped ceramics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	3.337	eV	—
↳	0.000	eV	—
Magnetic Moment(μB)2 entries	0.000	μB	—
↳	2.000	μB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)2 entries	-2.807	eV/atom	—
↳	1.240	eV/atom	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaLaO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control