GaLaO3 is a gallium lanthanum oxide compound belonging to the rare-earth doped semiconductor family, typically investigated as a wide-bandgap material for optoelectronic and high-temperature applications. This material remains largely in the research phase, with potential applications in UV-transparent conductors, scintillation detectors, and next-generation power electronics where materials combining gallium oxide's thermal stability with rare-earth functionality offer advantages over conventional GaN or Ga2O3 platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.337 | eV | DFT · PBE | ||
| ↳ | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | DFT | ||
| ↳ | 2.000 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -2.807 | eV/atom | DFT | ||
| ↳ | 1.240 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data