GaLaO2N is an oxynitride ceramic compound combining gallium, lanthanum, oxygen, and nitrogen elements. This material belongs to the emerging class of mixed-anion ceramics that are primarily investigated in research settings for their potential to bridge properties between traditional oxides and nitrides. Applications are largely experimental but center on photocatalysis, optoelectronics, and high-temperature structural applications where the oxynitride composition may offer improved thermal stability, band gap tunability, or chemical resistance compared to conventional oxide or nitride alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.531 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.700 | eV/atom | — |