GaKN3 is a gallium-based ceramic compound combining gallium with potassium and nitrogen, representing an emerging material in the nitride ceramic family. This compound is primarily of research and development interest for high-temperature applications and advanced semiconductor or optoelectronic device structures, with potential advantages in thermal stability and electronic properties compared to conventional gallium nitride variants.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 7.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 3.680 | eV/atom | — |