GaInON2

ceramic
· GaInON2

GaInON2 is an experimental quaternary nitride ceramic compound combining gallium, indium, oxygen, and nitrogen—a member of the oxynitride family that bridges traditional III-V semiconductors and ceramic materials science. This material is primarily studied in research contexts for wide-bandgap semiconductor and photonic applications, where its mixed anion chemistry offers potential for tuning optical and electronic properties beyond conventional GaN or InN binaries. Industrial adoption remains limited, but the material family is of interest for next-generation optoelectronics, power devices, and high-temperature structural applications where the oxygen incorporation may enhance thermal stability or lattice engineering compared to binary nitrides.

wide-bandgap semiconductorsexperimental photonicshigh-temperature optoelectronicsresearch-phase materialsnitride alloy developmentsolar cells and UV emitters

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Magnetic Moment(μB)
—
μB——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
—
eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.