GaInOFN is an experimental oxynitride ceramic compound combining gallium, indium, oxygen, and nitrogen elements, representing an emerging class of wide-bandgap semiconductors and functional ceramics. This material family is primarily under investigation for optoelectronic and photonic applications where tunable electronic properties and thermal stability are advantageous over conventional binary nitrides or oxides. Current interest centers on photocatalysis, UV-visible light emission, and high-temperature electronic devices, though the material remains largely in research and development phases rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.9752 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.080 | eV/atom | — |