GaInN3
ceramic· GaInN3
GaInN3 is a ternary nitride ceramic compound combining gallium, indium, and nitrogen, belonging to the III-nitride semiconductor family. This material is primarily investigated in research contexts for optoelectronic and high-power electronic applications, where its tunable bandgap (controlled by gallium-to-indium ratio) and wide direct bandgap make it relevant for light emission and high-frequency devices operating in extreme conditions. Engineers consider GaInN3 systems as alternatives to binary GaN when wider spectral tunability or lattice engineering for heterostructure design is needed, particularly in next-generation LED and RF/power electronics research.
optoelectronic devices (LEDs)high-power RF semiconductorsbandgap engineering researchheterostructure designexperimental compound semiconductorsUV-to-visible emitters
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.