GaInN3

ceramic

· GaInN3

GaInN3 is a ternary nitride ceramic compound combining gallium, indium, and nitrogen, belonging to the III-nitride semiconductor family. This material is primarily investigated in research contexts for optoelectronic and high-power electronic applications, where its tunable bandgap (controlled by gallium-to-indium ratio) and wide direct bandgap make it relevant for light emission and high-frequency devices operating in extreme conditions. Engineers consider GaInN3 systems as alternatives to binary GaN when wider spectral tunability or lattice engineering for heterostructure design is needed, particularly in next-generation LED and RF/power electronics research.

optoelectronic devices (LEDs)high-power RF semiconductorsbandgap engineering researchheterostructure designexperimental compound semiconductorsUV-to-visible emitters

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	5.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.140	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental