Gallium iodide (GaI) is an inorganic ceramic compound belonging to the III-V semiconductor family, synthesized through combination of gallium and iodine elements. This material is primarily of research and development interest rather than established in high-volume industrial production, with potential applications in optoelectronic devices, photovoltaic systems, and solid-state radiation detection where its electronic band structure and optical properties are relevant.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,485.2 | ksi | — | ||
Shear Modulus(G) | 123.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1069 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9170 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3394 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1029 | eV/atom | — |