Gallium iodide (GaI₂) is a III-V semiconductor ceramic compound combining gallium and iodine elements. This material is primarily of research and developmental interest rather than established in high-volume production, with potential applications in optoelectronic devices, photovoltaic systems, and radiation detection where its semiconductor properties and optical characteristics may offer advantages in specialized niche applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,405.4 | ksi | — | ||
Shear Modulus(G) | 712.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1902 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.08220 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3754 | eV/atom | — |