Gallium iodide (GaI₂) is a III-V semiconductor ceramic compound combining gallium and iodine elements. This material is primarily of research and developmental interest rather than established in high-volume production, with potential applications in optoelectronic devices, photovoltaic systems, and radiation detection where its semiconductor properties and optical characteristics may offer advantages in specialized niche applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9.690 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 4.910 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.265 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.08220 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.3754 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data