GaHO₂ is an experimental gallium oxyhydroxide ceramic compound, representing an emerging class of layered oxide-hydroxide materials under investigation for advanced functional applications. While not yet commercialized in mainstream engineering, this material belongs to a family of gallia-based ceramics with potential utility in photocatalysis, semiconductor device components, and high-temperature structural applications where the combination of chemical stability and layered crystal structure could offer advantages over conventional oxides.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21,596.1 | ksi | — | ||
Exfoliation Energy(Eexf) | 38.11 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2300 | - | — | ||
Shear Modulus(G) | 14,010.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1761 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.106 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 15.10 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 1.848 | C/m² | — | ||
| ↳ | 0.09739 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -79.50 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1621 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.493 | eV/atom | — |