GaHgO2S

ceramic

· GaHgO2S

GaHgO₂S is a quaternary semiconductor ceramic compound combining gallium, mercury, oxygen, and sulfur elements. This is a research-phase material primarily studied for its potential optoelectronic and photonic properties, as it represents an unexplored composition within the broader family of mixed-anion semiconductors. Interest in this compound stems from the possibility of tuning bandgap and light-emission characteristics through its unusual elemental combination, though industrial applications remain limited and the material is not yet commercially established.

experimental optoelectronicsphotonic devices (research)wide-bandgap semiconductorscompound semiconductor researchphotocatalysis (potential)materials discovery

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.478e-11	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.840	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaHgO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental