GaHgO2N

ceramic

· GaHgO2N

GaHgO2N is an experimental mixed-metal oxide nitride ceramic compound containing gallium, mercury, oxygen, and nitrogen. This material belongs to the family of multinary ceramic oxides and nitrides being investigated for semiconductor and optoelectronic applications. As a research-phase compound with limited commercial deployment, it is primarily of interest to materials scientists exploring novel wide-bandgap semiconductors and functional ceramics with potential for high-temperature or radiation-resistant device applications.

wide-bandgap semiconductorsoptoelectronic researchhigh-temperature ceramicsexperimental nitride compoundsradiation-resistant materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.334	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.140	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaHgO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental