GaHgN3 is an experimental ternary ceramic compound combining gallium, mercury, and nitrogen elements, representing a rare compositional space in nitride ceramics research. This material family is primarily of academic interest for investigating novel electronic, optical, or structural properties in the gallium nitride system, with potential relevance to semiconductor or wide-bandgap applications if synthesis and stability challenges can be resolved. The inclusion of mercury—an unusual dopant or constituent in nitride ceramics—distinguishes this compound from conventional GaN-based materials and suggests targeted exploration of specific functional properties rather than near-term commercial deployment.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 4.545 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.600 | eV/atom | — |