GaHfO2N

ceramic

· GaHfO2N

GaHfO₂N is an experimental oxynitride ceramic compound combining gallium, hafnium, oxygen, and nitrogen phases. This material belongs to the family of advanced refractory and wide-bandgap ceramics being investigated for high-temperature, high-power electronic, and photonic applications where superior thermal stability and chemical inertness are required. Compared to traditional oxides, oxynitride ceramics offer enhanced mechanical properties and thermal conductivity, making them candidates for next-generation semiconductor gate dielectrics, power device packaging, and extreme-environment structural applications.

high-temperature dielectricspower semiconductor devicesadvanced gate insulationrefractory coatingsresearch and development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.718	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.080	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaHfO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental