Gallium hydride (GaH) is an experimental III–V semiconductor ceramic compound combining gallium with hydrogen, representing an understudied material within the broader family of gallium-based semiconductors and hydrides. While not yet commercialized at scale, GaH is of research interest for potential optoelectronic and electronic applications where unconventional bandgap engineering or hydrogen incorporation offers advantages over traditional GaAs or GaN platforms. Engineers would consider this material primarily in advanced materials R&D contexts rather than established production, pending further characterization and processing development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,255.5 | ksi | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 4,955.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1769 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2034 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.2027 | eV/atom | — |