GaH6N2F3

ceramic

· JVASP-119186· GaH6N2F3

GaH6N2F3 is a gallium-based ceramic compound combining gallium, nitrogen, and fluorine elements, representing an experimental or specialized material within the gallium nitride (GaN) family. This composition sits at the intersection of nitride ceramics and fluoride chemistry, making it a research-phase material with potential applications in high-temperature, chemically aggressive, or electronic environments where traditional nitride ceramics may be limited. The fluorine incorporation distinguishes it from conventional GaN, suggesting investigation into enhanced thermal stability, chemical resistance, or modified electronic properties compared to standard gallium nitride ceramics.

Research and developmentHigh-temperature ceramicsElectronic device substratesChemical-resistant coatingsExperimental semiconductor applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.09812	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	5.372	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	—
Formation Energy(ΔHf)	-1.214	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaH6N2F3

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental