GaH6N2F3 is a gallium-based ceramic compound combining gallium, nitrogen, and fluorine elements, representing an experimental or specialized material within the gallium nitride (GaN) family. This composition sits at the intersection of nitride ceramics and fluoride chemistry, making it a research-phase material with potential applications in high-temperature, chemically aggressive, or electronic environments where traditional nitride ceramics may be limited. The fluorine incorporation distinguishes it from conventional GaN, suggesting investigation into enhanced thermal stability, chemical resistance, or modified electronic properties compared to standard gallium nitride ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.716 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 5.372 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.214 | eV/atom | — |