GaGeON2

ceramic

· GaGeON2

GaGeON2 is an experimental ceramic compound combining gallium, germanium, oxygen, and nitrogen elements, belonging to the family of mixed-anion ceramics that blend oxide and nitride chemistries. This material class is primarily investigated in research settings for advanced electronic, photonic, and structural applications where conventional oxides or nitrides show limitations. Its potential significance lies in bridging properties between oxide ceramics (good thermal stability) and nitride ceramics (high hardness and chemical resistance), making it a candidate for next-generation wide-bandgap semiconductors, high-temperature structural coatings, or specialized optical devices, though industrial adoption remains limited pending validation of synthesis methods and performance scalability.

wide-bandgap semiconductorshigh-temperature coatingsresearch optoelectronicsadvanced ceramics developmentthermal barrier applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.1408	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaGeON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental