GaGe

ceramic

· JVASP-109183· GaGe

GaGe is a binary ceramic compound composed of gallium and germanium, belonging to the III-IV semiconductor ceramic family. This material is primarily investigated in research contexts for optoelectronic and photonic applications, where its wide bandgap and semiconducting properties make it potentially useful for high-frequency devices and radiation detection. GaGe offers an alternative material platform to more common III-V compounds (like GaAs) for specialized applications requiring germanium's heavier atomic mass and thermal properties.

semiconductor researchoptoelectronic deviceshigh-frequency electronicsradiation detectioninfrared applicationsexperimental materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	4.887	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.1188	eV/atom	—
Formation Energy(ΔHf)	0.1168	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaGe

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental