GaGe is a binary ceramic compound composed of gallium and germanium, belonging to the III-IV semiconductor ceramic family. This material is primarily investigated in research contexts for optoelectronic and photonic applications, where its wide bandgap and semiconducting properties make it potentially useful for high-frequency devices and radiation detection. GaGe offers an alternative material platform to more common III-V compounds (like GaAs) for specialized applications requiring germanium's heavier atomic mass and thermal properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.887 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1188 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.1168 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data