GaGdO3

semiconductor

· GaGdO3

GaGdO₃ is a rare-earth-doped gallium oxide semiconductor compound that combines gallium oxide's wide bandgap properties with gadolinium for potential functional enhancement. This material is primarily of research interest for next-generation wide-bandgap power electronics, UV photodetectors, and high-temperature applications where conventional semiconductors fail; it represents an emerging platform in the rare-earth-modified oxide semiconductor family being explored to improve device performance, thermal stability, or enable new optical/magnetic functionality compared to undoped Ga₂O₃.

wide-bandgap power semiconductorsUV detection and sensinghigh-temperature electronicsresearch/experimental devicesoxide semiconductor platforms

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.228	eV	—
Magnetic Moment(μB)	0.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.822	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaGdO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control