GaGaN3

ceramic

· GaGaN3

GaGaN₃ is an experimental nitride ceramic compound combining gallium and nitrogen in a 1:3 stoichiometry, representing an emerging material within the wide bandgap semiconductor and nitride ceramic family. While not yet widely deployed in commercial applications, this compound is of research interest for high-temperature, high-power electronic devices and potentially for optoelectronic applications, leveraging the favorable properties of III-nitride systems. Its development reflects ongoing efforts to expand the performance envelope beyond conventional GaN and AlGaN materials for demanding aerospace, power electronics, and RF applications.

Wide-bandgap semiconductorsHigh-temperature electronicsResearch-phase power devicesNitride-based compoundsHigh-frequency RF applicationsExperimental device engineering

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	4.345	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.980	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental