GaFeON2

ceramic

· GaFeON2

GaFeON2 is an experimental ceramic compound containing gallium, iron, oxygen, and nitrogen, representing a mixed-anion ceramic in the oxynitride family. This material is primarily of research interest for its potential in high-temperature applications and electronic/photonic devices, as oxynitrides can offer enhanced properties compared to conventional oxides or nitrides, including improved thermal stability and tunable electronic characteristics. The specific combination of gallium and iron in an oxynitride matrix positions it as a candidate for next-generation semiconductors, photocatalysis, or specialized refractory applications, though industrial deployment remains limited pending further development and property optimization.

Research & development materialsHigh-temperature ceramicsPhotocatalytic applicationsSemiconductor researchElectronic materials testingFunctional ceramics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.741	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.080	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaFeON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental