GaFeO2N

ceramic

· GaFeO2N

GaFeO2N is an experimental oxynitride ceramic compound combining gallium, iron, oxygen, and nitrogen elements. This material belongs to the family of mixed-valence metal oxynitrides, which are under active research as potential semiconductors and photocatalysts due to their tunable bandgap and mixed oxidation states. The inclusion of nitrogen in the oxide lattice enables properties distinct from conventional metal oxides, making GaFeO2N of interest for energy conversion and environmental remediation applications where bandgap engineering and catalytic activity are priorities.

photocatalysis researchwater splitting/hydrogen productionenvironmental remediationphotovoltaic absorber layerssemiconductor thin filmsvisible-light photocatalysts

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.473	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaFeO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental