GaCuTe₂ is a ternary intermetallic compound combining gallium, copper, and tellurium, belonging to the family of semiconducting or semi-metallic chalcogenides. This material is primarily of research and development interest rather than established in high-volume production, with potential applications in thermoelectric energy conversion, optoelectronic devices, and specialized solid-state electronics where the unique band structure and carrier properties of mixed-metal tellurides offer advantages over binary compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,631.2 | ksi | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 4,381.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2060 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 33.85 range 32.90–34.79median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.07671 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.03340 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2294 | eV/atom | — |