GaCuSnSe4 is a quaternary semiconductor compound combining gallium, copper, tin, and selenium elements, belonging to the family of I-III-IV-VI semiconductors. This is primarily a research material under investigation for photovoltaic and thermoelectric applications, where its tunable bandgap and potential for earth-abundant, non-toxic device architectures make it notable compared to conventional cadmium-based or lead-based alternatives. The material is of particular interest to researchers developing next-generation thin-film solar cells and solid-state energy conversion devices, though it remains in early-stage development with limited commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.306 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.2310 | eV | DFT · OptB88vdW | ||
| ↳ | 0.6370 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 9.527 | - | DFT · OptB88vdW | ||
| ↳ | 9.846 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 20.93 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4302 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data