GaCsN3

ceramic

· GaCsN3

GaCsN3 is an experimental ternary nitride ceramic compound combining gallium, cesium, and nitrogen in a single-phase structure. This material belongs to the family of wide-bandgap semiconductors and refractory ceramics, and remains primarily in research rather than established commercial production. The compound is of interest to materials scientists exploring novel nitride systems for potential semiconductor, photonic, or high-temperature applications, though its performance advantages and manufacturing scalability compared to mature alternatives like GaN or conventional nitride ceramics are still under investigation.

advanced semiconductor researchwide-bandgap device explorationhigh-temperature ceramic applicationsphotonic materials developmentexperimental nitride systems

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.06461	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.680	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaCsN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental