GaCeO3

semiconductor

· GaCeO3

GaCeO3 is an experimental mixed-metal oxide semiconductor combining gallium and cerium, representing a compound from the rare-earth doped oxide family. This material exists primarily in research and development contexts, where it is being investigated for optoelectronic and photocatalytic applications that leverage the electronic and optical properties arising from cerium doping in gallium-oxide-based systems. Interest in this compound reflects broader efforts to engineer wide-bandgap semiconductors with tunable properties for next-generation devices, though commercial adoption remains limited compared to established alternatives like pure Ga2O3 or conventional III-V semiconductors.

wide-bandgap semiconductors (research)photocatalytic materials (development)optoelectronic devices (experimental)UV detectors (potential)rare-earth doped oxides

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.276	eV	—
Magnetic Moment(μB)	0.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.702	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaCeO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control