GaCdO₂S is a quaternary semiconductor ceramic composed of gallium, cadmium, oxygen, and sulfur. This material belongs to the family of mixed-anion semiconductors and is primarily investigated in research settings for optoelectronic and photocatalytic applications. The combination of cationic (Ga, Cd) and anionic (O, S) species creates a tunable bandgap that makes it of interest for visible-light photocatalysis, photodetection, and potential solar energy conversion, positioning it as an alternative to more conventional binary or ternary semiconductors in laboratory and emerging device contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.00552 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.040 | eV/atom | — |