GaCdO2N

ceramic

· GaCdO2N

GaCdO2N is an experimental oxynitride ceramic compound combining gallium, cadmium, oxygen, and nitrogen elements. This material belongs to the wider family of wide-bandgap semiconductors and mixed-anion ceramics, currently under research investigation rather than established in commercial production. The compound is of interest in photocatalysis, optoelectronics, and potentially photovoltaic applications where the combination of elements may enable tunable electronic properties; however, it remains largely a laboratory-phase material whose industrial viability and scalability have not been demonstrated.

photocatalytic water splittingoptoelectronic devices (research)wide-bandgap semiconductorsenvironmental remediation catalystssolar energy conversion (experimental)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	3.205	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.960	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaCdO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental