GaCdN3

ceramic

· GaCdN3

GaCdN3 is an experimental ternary nitride ceramic compound combining gallium, cadmium, and nitrogen. This material belongs to the III-V nitride family and is primarily of research interest for semiconductor and optoelectronic applications, where it may offer tunable bandgap properties or unique crystal structures compared to binary nitrides like GaN or CdN. While not yet established in mainstream industrial production, ternary nitride systems like this are investigated for potential use in high-frequency electronics, photonic devices, and advanced semiconductor heterostructures where composition engineering provides property control unavailable in simpler binary compounds.

research semiconductorsIII-V nitride heterostructuresoptoelectronic deviceswide-bandgap electronicsexperimental photonics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	5.152	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.480	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaCdN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental