GaCaO2N

semiconductor

· GaCaO2N

GaCaO₂N is an experimental oxynitride semiconductor combining gallium, calcium, oxygen, and nitrogen elements. This material belongs to the emerging class of wide-bandgap semiconductors and oxynitride compounds, which are primarily explored in research settings for optoelectronic and photocatalytic applications. Its potential lies in visible-light photocatalysis, LED development, and solid-state lighting where band-structure engineering through mixed anion incorporation offers advantages over conventional binary nitrides or oxides.

photocatalytic water splittingvisible-light photocatalysiswide-bandgap semiconductorssolid-state lighting researchenvironmental remediationemerging optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5000	eV	—
Magnetic Moment(μB)	-0.000364	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.340	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaCaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control