GaCaO2N
semiconductor· GaCaO2N
GaCaO₂N is an experimental oxynitride semiconductor combining gallium, calcium, oxygen, and nitrogen elements. This material belongs to the emerging class of wide-bandgap semiconductors and oxynitride compounds, which are primarily explored in research settings for optoelectronic and photocatalytic applications. Its potential lies in visible-light photocatalysis, LED development, and solid-state lighting where band-structure engineering through mixed anion incorporation offers advantages over conventional binary nitrides or oxides.
photocatalytic water splittingvisible-light photocatalysiswide-bandgap semiconductorssolid-state lighting researchenvironmental remediationemerging optoelectronics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.